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Gettering of iron by oxygen precipitates

WebThe combined use of rapid thermal annealing and deep level transient spectroscopy is described as an efficient means to reveal chromium profiles in silicon wafer after various thermal treatments. The proposed method has been successfully applied to observe the depletion of chromium atoms at the near‐surface region of intentionally contaminated … Webfor gettering when these low temperature oxygen precipitates have been generated. In order to increase the probability of finding such phases expected to be in low …

Iron Gettering Controlled by Size and Density of Oxygen …

WebNov 1, 2016 · The factors on gettering effectiveness are studied, including the fabrication procedures and the structures of the polysilicon passivating contact. The research … Webthe precipitates are found to be t he recombination active area.7 Reducing the negative impact of iron contamination in silicon, either by removing the dissolved iron atoms from … scs warehouse nz https://cakesbysal.com

Rapid Thermal Processing and the Control of Oxygen Precipitation ...

WebNov 1, 2016 · Re-emission of iron originally gettered by oxygen precipitates in a silicon wafer J. Appl. Phys. (1993) There are more references available in the full text version of this article. Cited by (4) Effective gettering of in-situ phosphorus-doped polysilicon passivating contact prepared using plasma-enhanced chemical-vapor deposition technique WebJan 1, 2024 · In general, gettering can be considered as a three-step process: release, diffusion, and capture, as shown by the schematic in Fig. 1 [ 37 ]. If not already in a dissolved and mobile state, metallic impurities need to be first released from their metal-silicide precipitates and/or metal-containing clusters [ 38 ]. WebThe gettering efficiency of iron (Fe) was investigated as a function of the size and density of oxygen precipitates in Czochralski-grown silicon (CZ-Si). During the precipitation … pcwa careers

Gettering in silicon photovoltaics: A review - ScienceDirect

Category:Competitive gettering of iron in silicon photovoltaics: Oxide ...

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Gettering of iron by oxygen precipitates

Impact of iron on the room temperature luminescence …

WebJan 1, 2004 · It was seen that internal gettering also works in presence of back-side poly Si and high B concentration (p/p+ samples with high oxygen content and back-side poly Si) because of, on one hand,... WebThe model proposed here accurately describes the internal gettering behavior of Fe at both low and practical temperatures by considering the nucleation of iron silicide on the oxygen precipitates. Our model also explains how the gettering behavior is influenced by the product of NRo at low temperature and by the product of NRo3 at high ...

Gettering of iron by oxygen precipitates

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WebINIS Repository Search provides online access to one of the world's largest collections on the peaceful uses of nuclear science and technology. The International Nuclear Information System is operated by the IAEA in collaboration with over 150 members. WebIn order to better understand and model internal gettering of iron in silicon, a quantitative investigation of iron precipitation in silicon containing different oxygen precipitate …

WebMar 1, 1998 · Iron gettering at both implantation-induced cavities and oxygen precipitates in silicon was experimentally measured and theoretically modeled. Since … WebJun 4, 1998 · In order to better understand and model internal gettering of iron in silicon, a quantitative investigation of iron precipitation in silicon containing different oxygen …

WebApr 28, 2006 · Our model also explains how the gettering behavior is influenced by the product of NRo at low temperature and by the product … WebGettering is defined as a process by which metal impurities in the device region are reduced by localizing them in predetermined, passive regions of the silicon wafer. Gettering …

WebDec 31, 1996 · The U.S. Department of Energy's Office of Scientific and Technical Information

WebJan 1, 2002 · The paper demonstrates the relevance of oxygen clusters density and stability as well as thermal treatment cooling phase conditions on gettering mechanism activation. A theoretical model is... pcwaddinstanceWebInternal gettering efficiencies and stabilities of high and low carbon doped silicon have been compared with standard and ramped annealing conditions. The gettering efficiency of low carbon silicon has been found to be greatly enhanced with ramped annealing by creating a high concentration of oxygen precipitates and related defects. This ramped low carbon … pcw accountingWebMar 1, 2009 · We have studied both experimentally and theoretically iron gettering behavior in silicon-on-insulator (SOI) wafers. We show that a deposition of a polysilicon layer between the buried oxide and... pcwa customer service