WebThe combined use of rapid thermal annealing and deep level transient spectroscopy is described as an efficient means to reveal chromium profiles in silicon wafer after various thermal treatments. The proposed method has been successfully applied to observe the depletion of chromium atoms at the near‐surface region of intentionally contaminated … Webfor gettering when these low temperature oxygen precipitates have been generated. In order to increase the probability of finding such phases expected to be in low …
Iron Gettering Controlled by Size and Density of Oxygen …
WebNov 1, 2016 · The factors on gettering effectiveness are studied, including the fabrication procedures and the structures of the polysilicon passivating contact. The research … Webthe precipitates are found to be t he recombination active area.7 Reducing the negative impact of iron contamination in silicon, either by removing the dissolved iron atoms from … scs warehouse nz
Rapid Thermal Processing and the Control of Oxygen Precipitation ...
WebNov 1, 2016 · Re-emission of iron originally gettered by oxygen precipitates in a silicon wafer J. Appl. Phys. (1993) There are more references available in the full text version of this article. Cited by (4) Effective gettering of in-situ phosphorus-doped polysilicon passivating contact prepared using plasma-enhanced chemical-vapor deposition technique WebJan 1, 2024 · In general, gettering can be considered as a three-step process: release, diffusion, and capture, as shown by the schematic in Fig. 1 [ 37 ]. If not already in a dissolved and mobile state, metallic impurities need to be first released from their metal-silicide precipitates and/or metal-containing clusters [ 38 ]. WebThe gettering efficiency of iron (Fe) was investigated as a function of the size and density of oxygen precipitates in Czochralski-grown silicon (CZ-Si). During the precipitation … pcwa careers